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IDW40G120C5B

INFINEON SP001020714

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INFINEON

SiC-D 1200 40A 1,4V TO247-3
Supplier: INFINEON
Matchcode: IDW40G120C5B
Rutronik No.: DSKYP5478
Unit Pack: 30
MOQ: 240
package: TO247-3
Packaging: TUBE
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Datasheet
Datasheet

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16.73 $
4,015.20 $

SiC-D 1200 40A 1,4V TO247-3 Description

The CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temperature dependency of VF
  • Best-in-class surge current capability
  • Excellent thermal performance

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Parameter

V(RRM)
1200 V
I(F)per diode
20 A
I(FSM)
290 A
V(F)
1.65 V
Technology
5thinQ!SiC
Automotive
NO
Package
TO247-3
RoHS Status
RoHS-conform
Packaging
TUBE
Configuration
CommonCath
Mounting
THT
Supplier Part
SP001020714
ECCN
EAR99
Customs Tariff No.
85411000000
Country
China
ABC-Code
A
Supplier Lead time
27 weeks
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