- Configuration
- N-CH
- V(DS)
- 700 V
- I(D)at Tc=25°C
- 12.5 A
- RDS(on)at 10V
- 360 mOhm
- Q(g)
- 16.4 nC
- P(tot)
- 59.5 W
- R(thJC)
- 2.1 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- CoolMOS
- Automotive
- NO
- Package
- DPAK
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001491634
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- China
- ABC-Code
- B
- Supplier Lead time
- 19 weeks
Description:
Summary of Features
- Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
- Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior
- Allowing high speed switching
- Integrated protection Zener diode
- Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
- Finely graduated portfolio
Benefits
- Cost competitive technology
- Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
- Further efficiency gain at higher switching speed
- Supporting less magnetic size with lower BOM costs
- High ESD ruggedness up to HBM Class 2 level
- Easy to drive and design-in
- Enabler for smaller form factors and high power density designs
- Excellent choice in selecting the best fitting product
Target Applications
- Charger
- Adapter
- TV
- Lighting
- Audio
- Aux power
