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STGW40H65DFB

ST STGW40H65DFB

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ST

IGBT 650V 40A 1,6V TO247-3
Supplier: STMicroelectronics
Matchcode: STGW40H65DFB
Rutronik No.: IGBT1853
Unit Pack: 1
MOQ: 1
package: TO247-3
Packaging: TUBE
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2.88 $
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60 2.71 $
90 2.66 $
150 2.62 $
270 2.46 $

IGBT 650V 40A 1,6V TO247-3 Description

Trench gate field-stop IGBT, HB series 650 V, 40 A high speed in a TO-247 package

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.


Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
  • Tight parameter distribution
  • Safe paralleling
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode


Parameter

V(CE)
650 V
I(C)
40 A
V(CEsat)
1.6 V
Package
TO247-3
Bodydiode
YES
P(tot)
283 W
Automotive
NO
t(r)
13 nS
td(off)
142 nS
td(on)
40 nS
Mounting
THT
Leadfree Defin.
10
Technology
HBseries
Packaging
TUBE
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
Supplier Lead time
34 weeks
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