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IKW75N65ES5

INFINEON SP001319684

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INFINEON

IGBT 650V 75A 1.42V TO247-3
Supplier: Infineon
Matchcode: IKW75N65ES5
Rutronik No.: IGBT1981
Unit Pack: 30
MOQ: 240
package: TO247-3
Packaging: TUBE
Topseller
On request
4.05 $
972.00 $

IGBT 650V 75A 1.42V TO247-3 Description

Description:

Summary of Features

  • Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
  • 4 times Ic pulse current (100°C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature Tvj = 175°C
  • Qualified according to JEDEC standards

Benefits

  • VCEpeak clamping circuits not required
  • No need for gate clamping components
  • Good EMI behaviour
  • Excellent for paralleling

Parameter

V(CE)
650 V
I(C)
75 A
V(CEsat)
1.42 V
Package
TO247-3
Bodydiode
YES
P(tot)
395 W
Automotive
NO
t(r)
46 nS
td(off)
144 nS
td(on)
40 nS
Mounting
THT
Leadfree Defin.
10
Technology
HighSpeed
Packaging
TUBE
Supplier Part
SP001319684
ECCN
EAR99
Customs Tariff No.
85412900000
Country
China
ABC-Code
A
Supplier Lead time
28 weeks
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