- Polarity
- NPN
- U(cc) max
- 4 V
- Frequency f
- 45000 MHz
- P(out)
- 0.24 W
- Package
- SOT343
- Automotive
- NO
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001023768
- ECCN
- EAR99
- Customs Tariff No.
- 85412100000
- Country
- China
- ABC-Code
- B
- Supplier Lead time
- 10 weeks
The BFP760 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Summary of Features:
- Low noise figure NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
- High gain Gms = 16.5 dB at 5.5 GHz, 3 V, 30 mA
- OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
- Wireless communications: WLAN, WiMax and UWB
- Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
- Multimedia applications such as portable TV, CATV, FM Radio
- ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications