- V(RRM)
- 650 V
- I(F)per diode
- 06 A
- I(FSM)
- 54 A
- V(F)
- 2.4 V
- Technology
- 5thinQ!SiC
- Automotive
- AEC-Q(101)
- Package
- TO220-2
- RoHS Status
- RoHS-conform
- Packaging
- TUBE
- Configuration
- SINGLE
- Mounting
- THT
- T(j) max
- 175 °C
- Supplier Part
- SP001632370
- ECCN
- EAR99
- Customs Tariff No.
- 85411000000
- Country
- Malaysia
- ABC-Code
- B
- Supplier Lead time
- 17 weeks
CoolSiC™ generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- V br at 650V
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Target Applications
- Telecom/server SMPS
- Solar
- UPS
- PC power
- LED/LCD TV
- Motor drives
- HID lighting
