- Configuration
- N-CH
- V(DS)
- 40 V
- I(D)at Tc=25°C
- 381 A
- RDS(on)at 10V
- 0.7 mOhm
- Q(g)
- 94 nC
- P(tot)
- 188 W
- R(thJC)
- 0.8 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- OptiMOS 6
- Fast bodydiode
- YES
- Automotive
- NO
- Package
- TDSON-8
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP005570350
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Malaysia
- ABC-Code
- C
- Supplier Lead time
- 54 weeks
OptiMOS™ 6 power MOSFET 40 V normal level with latest Infineon technology in a SuperSO8 package
With this best-in-class OptiMOSTM 6 power MOSFET 40V normal level, Infineon offers a benchmark solution for normal level (higher threshold voltage) required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.
In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the gate voltage spikes' peak, further contributing to the robustness against unwanted turn-on. The ISC007N04NM6 features very low RDS(on) of 0.7mOhm.
Summary of Features
- N-channel enhancement mode
- Normal level gate threshold (2.3 V typical)
- MSL1 up to 260°C peak reflow
- 175°C junction temperature (Tj)
- Optimized charge ratio QGD/QGS <0.8 for C.dv/dt immunity
- Low gate charge
- 100% avalanche tested
- Superior thermal resistance
Benefits
- Normal gate drive offers immunity to false turn-on in noisy environments
- Reduced switching losses due to low gate charge
- Suitable for FOC (field-oriented control) and DTC (direct torque control) motor control techniques
Potential Applications
