- V(CE)
- 1200 V
- I(C)
- 75 A
- td(on)
- 150 ns
- td(off)
- 395 ns
- P(tot)
- 150 W
- t(r)
- NO ns
- V(CEsat)
- SMD V
- Bodydiode
- NO
- Mounting
- PRESSFIT
- Automotive
- NO
- Package
- 34mm
- RoHS Status
- RoHS-conform
- Packaging
- BOX
- Supplier Part
- SP000624916
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Slovakia
- ABC-Code
- A
- Supplier Lead time
- 22 weeks
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design.
Summary of Features
- Extended Operation Temperature T vj op
- Low Switching Losses
- Low V CEsat
- T vj op = 150°C
- V CEsat with positive Temperature Coefficient
- Isolated Base Plate
- Standard Housing
Benefits
- Flexibility
- Optimal electrical performance
- Highest reliability
Target Applications
- drives
- solar
- cav
- ups
- induction-heating
- welding
