- Configuration
- N-CH
- V(DS)
- 60 V
- I(D)at Tc=25°C
- 360 A
- RDS(on)at 10V
- 0.945 mOhm
- Q(g)
- 311 nC
- P(tot)
- 417 W
- R(thJC)
- 0.36 K/W
- Logic level
- NO
- Mounting
- SMD
- Technology
- StrongIR
- Fast bodydiode
- YES
- Automotive
- NO
- Package
- TO-263-7
- RoHS Status
- RoHS-conform
- Packaging
- REEL
- Supplier Part
- SP001646066
- ECCN
- EAR99
- Customs Tariff No.
- 85412900000
- Country
- Mexico
- ABC-Code
- A
- Supplier Lead time
- 14 weeks
Infineon’s latest 60 V StrongIRFET™ power MOSFET devices are optimized for both high current and low RDS(on) making them the ideal solution for high current battery powered applications.
Summary of Features
- Low RDS(on) High current capability Industry standard package Flexible pinout Optimized for 10 V gate drive
Benefits
- Reduction in conduction losses Increased power density Drop in replacement to existing devices Offers design flexibility Provides immunity to false turn-on in noisy environments
| Follow-up article |
Unit Pack
Unit Price |
Stock Info | ||||
|---|---|---|---|---|---|---|
Best Choice
|
IPF012N06NF2SATMA1NCH 60V 250A 1,2mOhm TO263-7
Part No.:
STDMOS1428
package:
TO-263-7
Packaging:
REEL
|
Unit Price
1,88 $
|
Unit Pack
800
|
Stock Info
|
Price, Lead time
Datasheet
| |
